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ARF461BG

Microsemi

RF POWER MOSFET

RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE ARF461A(G) TO-247 ARF461B(G) Common Source 250V 150W 65MHz The ARF46...



ARF461BG

Microsemi


Octopart Stock #: O-1526178

Findchips Stock #: 1526178-F

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Description
RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE ARF461A(G) TO-247 ARF461B(G) Common Source 250V 150W 65MHz The ARF461A and ARF461B comprise a symmetric pair of common drain RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 65 MHz. They have been optimized for both linear and high efficiency classes of operation. • Specified 250 Volt, 40.68 MHz Characteristics: • Output Power = 150 Watts. • Gain = 13dB (Class AB) • Efficiency = 75% (Class C) • Low Cost Common Source RF Package. • Low Vth thermal coefficient. • Low Thermal Resistance. • Optimized SOA for Superior Ruggedness. • RoHS Compliant MAXIMUM RATINGS Symbol VDSS VDGO ID VGS PD RθJC TJ, TSTG TL Parameter Drain-Source Voltage Drain-Gate Voltage Continuous Drain Current @ TC = 25°C Gate-Source Voltage Total Power Dissipation @ TC = 25°C Junction to Case Operating and Storage Junction Temperature Range Lead Temperature: 0.063” from Case for 10 Sec. All Ratings: TC = 25°C unless otherwise specified. ARF461AG/BG 1000 1000 6.5 ±30 250 0.50 -55 to 150 300 Unit V A V W °C/W °C STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS VDS(ON) IDSS IGSS gfs VGS(TH) Parameter Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 μA) On State Drain Voltage 1 (ID(ON) = 3.25A, VGS = 10V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8VDSS, VGS = 0, TC = 125°C) Gate-Source Leakage Current (VDS = ±30V, VDS = 0V)...




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