DatasheetsPDF.com

MSC030SDA120B

Microchip
Part Number MSC030SDA120B
Manufacturer Microchip
Description Schottky Diode
Published Feb 12, 2024
Detailed Description 1200 V, 30 A mSiC™ Schottky Diode MSC030SDA120B, AEC-Q101 Product Overview 1200 V, 30 A Silicon Carbide (SiC) Schottky D...
Datasheet PDF File MSC030SDA120B PDF File

MSC030SDA120B
MSC030SDA120B

Overview
1200 V, 30 A mSiC™ Schottky Diode MSC030SDA120B, AEC-Q101 Product Overview 1200 V, 30 A Silicon Carbide (SiC) Schottky Diode, TO-247 The industrial-grade product is MSC030SDA120B.
The automotive-grade product is MSC030SDA120BVAO.
Features • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant Benefits • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density Applications • Power factor correction (PFC) • Anti-parallel diode – Switch-mode power supply – Inverters/converters – Motor controllers • Freewheeling diode – Switch-mode power supply – Inverters/converters • Snubber/clamp diode Data Sheet © 2023 Microchip Technology Inc.
and its subsidiaries DS00005049A - 1 MSC030SDA120B, AEC-Q101 Device Specifications 1.
1.
1 1.
2 Device Specifications This section shows the specifications of this device.
Absolute Maximum Ratings The following table shows the absolute maximum ratings of this device.
Table 1-1.
Absolute Maximum Ratings Symbol Parameter Ratings VR VRRM VRWM IF IFRM Maximum DC reverse voltage Maximum peak repetitive reverse voltage Maximum working peak reverse voltage Maximum DC forward current TC = 25 °C TC = 135 °C TC = 145 °C Repetitive peak forward surge current (TC = 25 °C, tP = 8.
3 ms, half sine wave) 1200 65 29 24 92 IFSM PTOT EAS Non-repetitive forward surge current (TC = 25 °C, tP = 8.
3 ms, half sine wave) 165 Total power dissipation TC = 25 °C 259 TC = 110 °C 112 Single-pulse avalanche energy (starting TJ = 25 °C, L = 0.
22 100 mH, peak IL = 30A) Unit V A W mJ The following table shows the thermal and mechanical characteristics of this device.
Table 1-2.
Thermal and Mechanical Characteristics Symbol Characteristic/Test Conditions Min RθJC TJ, TSTG Junction-to-case thermal resistance Operating junction and storage temperature –55 range TL Lead temperature for 10 seconds Wt Package ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)