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2N2222A

STMicroelectronics
Part Number 2N2222A
Manufacturer STMicroelectronics
Description HIGH SPEED SWITCHES
Published Mar 6, 2024
Detailed Description 2N2219A ® 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epit...
Datasheet PDF File 2N2222A PDF File

2N2222A
2N2222A

Overview
2N2219A ® 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) ) metal case.
They are designed for high speed t(s switching application at collector current up to c 500mA, and feature useful current gain over a u wide range of collector current, low leakage Prod currents and low saturation voltage.
TO-18 TO-39 - Obsolete INTERNAL SCHEMATIC DIAGRAM solete Product(s) ABSOLUTE MAXIMUM RATINGS ObSymbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Collector-Emitter Voltage (IB = 0) 40 V VEBO Emitter-Base Voltage (IC = 0) 6 V IC Collector Current 0.
6 A ICM Collector Peak Current (tp < 5 ms) Ptot Total Dissipation at Tamb ≤ 25 oC for 2N2219A for 2N2222A at TC ≤ 25 oC for 2N2219A for 2N2222A Tstg Storage Temperature Tj Max.
Operating Junction Temperature 0.
8 A 0.
8 W 0.
5 W 3 W 1.
8 W -65 to 175 oC 175 oC February 2003 1/7 2N2219A / 2N2222A THERMAL DATA Rthj-case Thermal Resistance Junction-Case Rthj-amb Thermal Resistance Junction-Ambient Max Max TO-39 50 187.
5 TO-18 83.
3 300 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min.
Typ.
Max.
Unit ICBO Collector Cut-off Current (IE = 0) VCB = 60 V VCB = 60 V Tj = 150 oC 10 nA 10 µA ICEX Collector Cut-off Current (VBE = -3V) VCE = 60 V t(s) IBEX Base Cut-off Current VCE = 60 V (VBE = -3V) uc IEBO Emitter Cut-off Current VEB = 3 V (IC = 0) rod V(BR)CBO Collector-Base IC = 10 µA 75 Breakdown Voltage P (IE = 0) te V(BR)CEO∗ Collector-Emitter IC = 10 mA 40 le Breakdown Voltage (IB = 0) so V(BR)EBO Emitter-Base IE = 10 µA 6 b Breakdown Voltage O (IC = 0) - VCE(sat)∗ Collector-Emitter ) Saturation Voltage IC = 150 mA IB = 15 mA IC = 500 mA IB = 50 mA t(s VBE(sat)∗ Base-Emitter IC = 150 mA IB = 15 mA 0.
6 c Saturation Voltage ...


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