DatasheetsPDF.com

KX105

KCB
Part Number KX105
Manufacturer KCB
Description GaN HEMT Transistor
Published Mar 24, 2024
Detailed Description KX105 15 W, 6.0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transi...
Datasheet PDF File KX105 PDF File

KX105
KX105

Overview
KX105 15 W, 6.
0 GHz, GaN HEMT Transistor DESCRIPTION The KX105 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) transistor in a Surface‐Mount Technology (SMT) package for high reliability applications.
This transistor offers superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.
FEATURES  High Small Signal Gain: 15 dB @ 4 GHz.
 High Output Power: 15W PSAT.
 High Breakdown Voltage, Efficiency and Temperature Operation.
APPLICATIONS  Microwave Radios  Militar...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)