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4N03L02

Infineon
Part Number 4N03L02
Manufacturer Infineon
Description Power-Transistor
Published Apr 1, 2024
Detailed Description OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C ...
Datasheet PDF File 4N03L02 PDF File

4N03L02
4N03L02

Overview
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Product Summary V DS R DS(on),max (SMD version) ID 30 V 2.
4 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N03S4L-02 IPI80N03S4L-03 IPP80N03S4L-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 4N03L02 4N03L03 4N03L03 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) ID T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Avalanche current, single pulse I AS T C=25 °C Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value Unit 80 A 80 320 260 mJ 80 A ±16 V 136 W -55 .
.
.
+175 °C 55/175/56 Rev.
2.
0 page 1 2007-03-09 IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 Parameter Symbol Conditions min.
Values typ.
Unit max.
Thermal characteristics2) Thermal resistance, junction - case R thJC - Thermal resistance, junction ambient, leaded R thJA - SMD version, device on PCB R thJA minimal footprint - 6 cm2 cooling area3) - - 1.
1 K/W - 62 - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 30 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 1.
0 1.
5 2.
2 Zero gate voltage drain current I DSS V DS=30 V, V GS=0 V, T j=25 °C - 0.
01 1 µA V DS=30 V, V GS=0 V, T j=125 °C2) - 10 1000 V DS=18 V, V GS=0 V, T j=85 °C2) - Gate-source leakage current I GSS V GS=16 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=4.
5 V, I D=40 A - ...


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