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GS-065-004-1-L

GaN Systems

650V E-mode GaN transistor

Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “Ga...


GaN Systems

GS-065-004-1-L

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Description
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is the company that originally developed the product. Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio. Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document. Future revisions will occur when appropriate, and any changes will be set out on the document history page. Continuity of ordering part numbers Infineon continues to support existing part numbers. Please continue to use the ordering part numbers listed in the datasheet for ordering. Infineon Technologies AG 81726 Munich, Germany www.infineon.com Features 650 V enhancement mode power transistor 850 V transient drain-to-source voltage Bottom-cooled, small 5x6 mm PDFN package RDS(on) = 450 mΩ IDSmax,DC = 4 A / IDSmax,Pulse = 7.1 A Ultra-low FOM Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) High switching frequency (> 1 MHz) Fast and controllable fall and rise times Reverse conduction capability Zero reverse recovery loss Source Sense (SS) pin for optimized gate drive RoHS 3 (6+4) compliant GS-065-004-1-L 650 V E-mode GaN transistor Datasheet Package Outline Circuit Symbol top view Applications Power Adapt...




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