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GS-065-004-1-L

GaN Systems
Part Number GS-065-004-1-L
Manufacturer GaN Systems
Description 650V E-mode GaN transistor
Published Apr 1, 2024
Detailed Description Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “Ga...
Datasheet PDF File GS-065-004-1-L PDF File

GS-065-004-1-L
GS-065-004-1-L

Overview
Please note that GaN Systems is an Infineon Technologies Company The document following this cover page is marked as “GaN Systems” document as this is the company that originally developed the product.
Please note that Infineon will continue to offer the product to new and existing customers as part of the Infineon product portfolio.
Continuity of document content The fact that Infineon offers the following product as part of the Infineon product portfolio does not lead to any changes to this document.
Future revisions will occur when appropriate, and any changes will be set out on the document history page.
Continuity of ordering part numbers Infineon continues to support existing part numbers.
Please continue to use the ordering part numbers listed in the datasheet for ordering.
Infineon Technologies AG 81726 Munich, Germany www.
infineon.
com Features • 650 V enhancement mode power transistor • 850 V transient drain-to-source voltage • Bottom-cooled, small 5x6 mm PDFN package • RDS(on) = 450 mΩ • IDSmax,DC = 4 A / IDSmax,Pulse = 7.
1 A • Ultra-low FOM • Simple gate drive requirements (0 V to 6 V) • Transient tolerant gate drive (-20 V / +10 V) • High switching frequency (> 1 MHz) • Fast and controllable fall and rise times • Reverse conduction capability • Zero reverse recovery loss • Source Sense (SS) pin for optimized gate drive • RoHS 3 (6+4) compliant GS-065-004-1-L 650 V E-mode GaN transistor Datasheet Package Outline Circuit Symbol top view Applications • Power Adapters • LED lighting drivers • Fast Battery Charging • Power Factor Correction • Appliance Motor Drives • Wireless Power Transfer • Industrial Power Supplies Description The GS-065-004-1-L is an enhancement mode GaN-onSilicon power transistor.
The properties of GaN allow for high current, high voltage breakdown and high switching frequency.
GaN Systems innovates with industry leading advancements such as patented Island Technology® cell layout which realizes high-current die and high yield.
The G...


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