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IMBG120R078M2H

Infineon

1200V SiC MOSFET

IMBG120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Fe...



IMBG120R078M2H

Infineon


Octopart Stock #: O-1529258

Findchips Stock #: 1529258-F

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IMBG120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Final datasheet CoolSiC™ 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET Features VDSS = 1200 V at Tvj = 25°C IDDC = 21 A at TC = 100°C RDS(on) = 78.1 mΩ at VGS = 18 V, Tvj = 25°C Very low switching losses Overload operation up to Tvj = 200°C Short circuit withstand time 2 µs Benchmark gate threshold voltage, VGS(th) = 4.2 V Robust against parasitic turn on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance 2021-10-27 restricted Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder Copyright © Infineon Technologies AG 2021. All rights reserved. Potential applications EV-Charging Online UPS/Industrial UPS Solar power optimizer String inverter General purpose drives (GPD) Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Description Pin definition: Pin 1 - Gate Pin 2 - Kelvin sense contact Pin 3…7 - Source Tab - Drain Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Type IMBG120R078M2H Package PG-TO263-7-HV-ND5.8 Marking 12M2H078 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2024-01-12 IMBG120R078M2H CoolSiC™ 1200 V SiC MOSFET G2 Table of c...




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