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AOCA33104E

Alpha & Omega Semiconductors

12V Common-Drain Dual N-Channel MOSFET

AOCA33104E 12V Common-Drain Dual N-Channel MOSFET General Description • Trench Power MOSFET technology • Ultra low RSS(...


Alpha & Omega Semiconductors

AOCA33104E

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Description
AOCA33104E 12V Common-Drain Dual N-Channel MOSFET General Description Trench Power MOSFET technology Ultra low RSS(ON) Common drain configuration for design simplicity RoHS and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VSS RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS=3.8V) RSS(ON) (at VGS=3.1V) RSS(ON) (at VGS=2.5V) Typical ESD protection 12V < 2.8mΩ < 3mΩ < 3.5mΩ < 4.2mΩ HBM Class 2 AlphaDFNTM 2.98x1.49_10 Top View D1 D2 Top View Bottom View 10 7 8 9 6 2 3 5 G1 G2 1 4 Pin1 Pin1 1, 2, 4, 5: Source(FET1) 6, 7, 9, 10: Source(FET2) S1 S2 3: Gate(FET1) 8: Gate(FET2) Orderable Part Number AOCA33104E Package Type AlphaDFNTM 2.98x1.49_10 Form Tape & Reel Minimum Order Quantity 8000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Source-Source Voltage VSS Gate-Source Voltage Source Current(DC) Note1 Source Current(Pulse) Note2 Power Dissipation Note1 VGS TA=25°C IS ISM TA=25°C PD Junction and Storage Temperature Range TJ, TSTG Rating 12 ±8 30 130 3.1 -55 to 150 Units V V A W °C Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient Maximum Junction-to-Ambient t ≤ 10s Steady-State RqJA Note 1. Is rated value is based on bare silicon.Mounted on 70mmx70mm FR-4 board. Note 2. PW <10 μs pulses, duty cycle 1% max. Typical 30 40 Units °C/W °C/W Rev.1.0 : June 2020 www.aosmd.com Page 1 of 5 AOCA33104E Electrical ...




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