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SQ1025X

Vishay
Part Number SQ1025X
Manufacturer Vishay
Description Automotive Dual P-Channel MOSFET
Published Apr 4, 2024
Detailed Description www.vishay.com SQ1025X Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RD...
Datasheet PDF File SQ1025X PDF File

SQ1025X
SQ1025X

Overview
www.
vishay.
com SQ1025X Vishay Siliconix Automotive Dual P-Channel 60 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.
5 V ID (A) Configuration SC-89 S1 1 - 60 4 8 - 0.
19 Dual 6 D1 FEATURES • TrenchFET® Power MOSFET • Typical ESD Protection: 2000 V • AEC-Q101 Qualifiedc • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 S1 S2 G1 2 5 G2 D2 3 4 S2 Top View Marking Code: 7 ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFET SC-89 SQ1025X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA = 25 °C TA = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Maximum Power Dissipationa TA = 25 °C TA = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 60 ± 20 - 0.
19 - 0.
11 - 0.
38 - 0.
75 0.
300 0.
100 - 55 to + 175 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Notes a.
Pulse test; pulse width  300 μs, duty cycle  2 %.
b.
When mounted on 1" square PCB (FR-4 material).
c.
Parametric verification ongoing.
PCB Mountb SYMBOL RthJA LIMIT 500 UNIT °C/W S12-2757-Rev.
C, 19-Nov-12 1 Document Number: 67060 For technical questions, contact: automostechsupport@vishay.
com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.
vishay.
com/doc?91000 www.
vishay.
com SQ1025X Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb Dynamicb VDS VGS(...


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