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Z0107MN0

WeEn
Part Number Z0107MN0
Manufacturer WeEn
Description 4Q Triac
Published Apr 7, 2024
Detailed Description Z0107MN0 4Q Triac 15 September 2018 Product data sheet 1. General description Planar passivated very sensitive gate fo...
Datasheet PDF File Z0107MN0 PDF File

Z0107MN0
Z0107MN0

Overview
Z0107MN0 4Q Triac 15 September 2018 Product data sheet 1.
General description Planar passivated very sensitive gate four quadrant triac in a SOT223 (SC-73) surface-mountable plastic package intended for applications requiring enhanced immunity to noise and direct interfacing to logic level ICs and low power gate drivers.
2.
Features and benefits • Direct interfacing to logic level ICs • Enhanced current surge capability • Enhanced noise immunity • High blocking voltage capability • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate 3.
Applications • General purpose low power motor control • Home appliances • Industrial process control • Low power AC Fan controllers 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tsp ≤ 105 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
9 Min Typ Max Unit - - 600 V - - 1 A - - 12.
5 A - - 13.
8 A - - 125 °C 0.
3 - 5 mA WeEn Semiconductors Z0107MN0 4Q Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dVcom/dt rate of change of commutating voltage Conditions VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
9 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
9 VD = 12 V; IT = 0.
1 A; T2- G+; Tj = 25 °C; Fig.
9 VD = 12 V; Tj = 25 °C; Fig.
11 IT = 1.
4 A; Tj = 25 °C; Fig.
12 VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit; Fig.
14 VD = 400 V; Tj = 110 °C; dIcom/ dt = 0.
44 A/ms; gate open circuit Min Typ Max Unit 0.
3 - 5 m...


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