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FQP9N90C

ON Semiconductor
Part Number FQP9N90C
Manufacturer ON Semiconductor
Description N-Channel MOSFET
Published Apr 18, 2024
Detailed Description MOSFET – N-Channel, QFET) 900 V, 8.0 A, 1.4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOS...
Datasheet PDF File FQP9N90C PDF File

FQP9N90C
FQP9N90C

Overview
MOSFET – N-Channel, QFET) 900 V, 8.
0 A, 1.
4 W FQP9N90C, FQPF9N90CT Description This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology.
This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength.
These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Features • 8 A 900 V, RDS(on) = 1.
4 W (Max.
) @ VGS = 10 V, ID = 4 A • Low Gate Charge (Typ.
45 nC) • Low Crss (Typ.
14 pF) • 100% Avalanche Tested • This Device is Pb−Free Halide, Free and RoHS Compliant.
DATA SHEET www.
onsemi.
com GDS TO−220 CASE 221A GDS TO−220 Fullpack, 3−Lead / TO−220F−3SG CASE 221AT D G S MARKING DIAGRAM FQPF 9N90CT AYWWZZ FQP9N90C, FQPF9N90CT A YWW ZZ = Specific Device Code = Assembly Location = Date Code (Year and Week) = Assembly Lot Code ORDERING INFORMATION Device FQP9N90C FQPF9N90CT Package TO−220 (Pb−Free) TO−220−3F (Pb−Free) Shipping† 1000 Units / Tube 1000 Units / Tube †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006 1 March, 2024 − Rev 3 Publication Order Number: FQPF9N90C/D FQP9N90C, MOSFET MAXIMUM RATINGS (TC = 25°C unless otherwise noted.
) Ratings Symbol Parameter FQP9N90C FQPF9N90CT Units VDSS ID Drain−Source Voltage Drain Current − Continuous (TC = 25°C) − Continuous (TC = 100°C) 900 V A 8.
0 8.
0* 2.
8 2.
8* IDM VGSS EAS IAR EAR dv/dt Drain Current − Pulsed (Note 1) Gate−Source Voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) 32 32* ±30 900 8.
0 20.
5 4.
0 A V mJ A mJ V/ns PD Power Dissipation (TC = 25°C) − Derate above 25°C 205 68 ...


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