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SST6601-C Datasheet PDF


Part Number SST6601-C
Manufacturer SeCoS
Title N And P-Channel Enhancement Mode Power MOSFET
Description The SST6601-C is the highest performance trench N-Ch and P-Ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate cha...
Features Advanced High Cell Density Trench Technology Super Low Gate Charge Green Device Available MARKING 6601 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch ORDER INFORMATION Part Number Type SST6601-C Lead (Pb)-free and Halogen-free B F C H DG K J REF. A B C D...

File Size 820.38KB
Datasheet SST6601-C PDF File








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SST6601 : The SST6601 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. FEATURES Low Gate Charge Low On-resistance MARKING CODE 6601 = Date Code PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch SOT-26 D H AC EL BJ K FG REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. G H J K L Millimeter Min. Max. 0.37 REF. 0.30 0.55 -0.12 REF. - 0.10 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings N-Channel P-Channel Drain-Source V.




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