Part Number | CG2H40025 |
Manufacturer | MACOM |
Title | RF Power GaN HEMT |
Description | The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C... |
Features | • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • ... |
Published | May 13, 2024 |
Datasheet | CG2H40025 PDF File |