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CG2H40025

MACOM
Part Number CG2H40025
Manufacturer MACOM
Title RF Power GaN HEMT
Description The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The C...
Features • Up to 6 GHz Operation • 17 dB Small Signal Gain at 2.0 GHz • 15 dB Small Signal Gain at 4.0 GHz • 30 W typical PSAT • ...
Published May 13, 2024
Datasheet PDF File CG2H40025 PDF File


CG2H40025
CG2H40025

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Features

• Up to 6 GHz Operation
• 17 dB Small Signal Gain at 2.0 GHz
• 15 dB Small Signal Gain at 4.0 GHz
• 30 W typical PSAT
• 70% Efficiency at PSAT
• 28 V Operation Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Tes...



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