S8050

S8050 : SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios in Class B Push-pull Operation. • Complimentary to SS8550 • Collector Current: IC = 1.5 A 1 TO-92 1. Emitter 2. Base 3. Collector Ordering Information Part Number SS8050BBU SS8050CBU SS8050CTA SS8050DBU SS8050DTA Top Mark S8050 S8050 S8050 S8050 S8050 Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L TO-92 3L Packing Method Bulk Bulk Ammo Bulk Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing .

S8050 : Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free  Excellent HFE Linearity.  High total power dissipation.(PC=300mW). S8050 APPLICATIONS  High Collector Current.. ORDERING INFORMATION Type No. Marking S8050 J3Y SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 40 VCEO Collector-Emitter Voltage 25 VEBO Emitter-Base Voltage 5 IC Collector Current -Continuous 500 PC Collector Dissipation 300 Tj,Tstg Junction and Storage Temperature -55 to +150 Units V V V mA mW ℃ C079 Rev.A www.gmesem.

S8050 : www.DataSheet4U.com S8050 NPN General Purpose Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current Total Device Dissipation TA=25 C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC PD Tj Tstg Value 25 40 5.0 500 0.625 150 -55 to +150 Unit Vdc Vdc Vdc mAdc W C C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 µAdc, IC=0) Collector Cutoff Current (VCE= 20 Vdc, I B =0) Collector Cutoff Current (V.

S8050 : The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.  FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to S8550  ORDERING INFORMATION Order Number Lead Free Plating Halogen Free Package S8050L-x-T92-B S8050G-x-T92-B TO-92 S8050L-x-T92-K S8050G-x-T92-K TO-92 Note: Pin Assignment: E: Emitter B: Base C: Collector 1 Pin Assignment 1 2 3 EBC EBC TO-92 Packing Tape Box Bulk  MARKING www.unisonic.com.tw Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 4 QW-R201-013.E S8050 NPN SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATI.

S8050 : Elektronische Bauelemente S8050 NPN Silicon Plastic-Encapsulate Transistors FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Collector 3 1 Base 2 Emitter A L 3 Top View 12 BS VG C D H K J SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0.177 K 0.450 0.600 L 0.890 1.020 S 2.100 2.500 V 0.450 0.600 All Dimension in mm MAXIMUM RATINGS (TA=25 OC unless otherwise noted) Symbol Parameter VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector .

S8050A : TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.  / Features PC,IC , S8550A 。 High PC and IC, complementary pair with S8550A. / Applications 。 Amplifier of portable radios in class B push-pull operation. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85~160 C 120~200 D 160~300 http://www.fsbrec.com 1/6 S8050A Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Junction Temperature .

S8050D : S8050D 331C ( TO-92) NPN /SILICON NPN TRANSISTOR 1 1.1 ， 1.2 2.1 ，amb= 25℃ - VCB0 40 V - VCE0 25 V - VEB0 5 V IC 0.45 A (amb=25℃) Ptot 0.55 W j 150 ℃ stg -55～150 ℃ 2.2 ，amb= 25℃ - - - ICB0 IEB0 FE VCEsat f VCB=40V, IE=0 VEB=5V ,IC=0 VCE=1V, IC=50mA IC=500mA, IB=50mA VCE=6V,IC= 20mA f=1MHZ 0.1 0.1 60 320 0.35 150 μA μA V MHz FOHAN HEXIN EMICONDUCOR CO., LD S8050D 331C ( TO-92) 3.1 NPN /SILICON NPN TRANSISTOR FOHAN HEXIN EMICONDUCOR CO., LD S8050D 331C ( TO-92) 4.1 NPN /SILICON NPN TRANSISTOR FOHAN HEXIN EMICONDUCOR CO., LD .

S8050LT1 : S8050LT1 PLASTIC-ENCAPSULATE TRANSISTORS TRANSISTOR（ NPN ） SOT—23 S8050LT1 FEATURES Power dissipation 0.3 PCM : Collector current 0.5 ICM : Collector-base voltage V(BR)CBO : 40 W （Tamb=25℃） 1. BASE A V 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol voltage voltage V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO HFE(1) unless otherwise specified） Test conditions IE=0 MIN 40 25 5 0.1 0.1 0.1 120 50 0.6 1.2 1.4 V V 350 TYP MAX UNIT V V V Parameter Collector-base breakdown Ic= 100μA， Collector-emitter breakdown Emitter-base breakdown current current current Ic= 0.1mA， IB=0 IE=100μA， IC=0 VCB=40 V , IE=0 voltage Collector cut-off Collector cut-off Emitter cut-off μA.

S8050LT1 : Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S8050LT1 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: 0.5 Collector-base voltage A V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter .

S8050M : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features S8550M 。 Complementary pair with S8550M.  / Applications 。 Power amplifier applications.  / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range B 85～160 C 120～200 Marking HY3B HY3C D 160～300 HY3D http://www.fsbrec.com 1/6 S8050M Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VE.

S8050MG : SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features S8550MG 。。 Complementary pair with S8550MG.HF Product.  / Applications 。 Power amplifier applications.  / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE(1) Range Marking B 85～160 GY3B C 120～200 GY3C D 160～300 GY3D http://www.fsbrec.com 1/6 S8050MG Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Symbo.

S8050T : Elektronische Bauelemente S8050T NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES z Complimentary to S8550T z Collector Current: IC = 0.5 A 4.5 0.2 4.55 0.2 TO-92 3.5 0.2 (1.27 Typ.) 12 3 1.25 0.2 2.54 0.1 14.3 0.2 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction, Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ, TSTG Ratings 40 25 5 500 625 +150, -55 ~ +150 0.43 0.08 0.07 1: Emitter 2: Base 3: Collector Unit V V V mA mW ℃ ELECTRICAL CHARACTERISTICS (TAMB = 25°C .

S8050W : Silicon Epitaxial Planar Transistor FEATURES z High Collector Current.(IC= 500mA). z Complementary To S8550W. z Excellent HFE Linearity. Pb Lead-free APPLICATIONS z High Collector Current. ORDERING INFORMATION Type No. Marking S8050W J3Y Production specification S8050W SOT-323 Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO VEBO IC PC Tj,Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature 40 25 5 500 300 -55 to +150 Units V V V mA mW ℃ F095 Rev.A www.gmicroelec.com 1 Production specification Silicon Epitaxial.

S8050W : SOT-323 NPN 。Silicon NPN transistor in a SOT-323 Plastic Package.  / Features S8550W 。 Complementary pair with S8550W.  / Applications 。 Power amplifier applications. / Equivalent Circuit / Pinning 3 21 PIN1：Emitter PIN 2：Base PIN 3：Collector / Marking hFE Classifications Symbol hFE Range Marking B 85～160 HY3B C 120～200 HY3C D 160～300 HY3D http://www.fsbrec.com 1/6 S8050W Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO.

S8054 : .

S8055M : Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes of current at less than 1.5V potential. Features & Benefits • RoHS compliant • Glass – passivated junctions • Voltage capability up to 1000 V • Surge capability up to 650 A Applications Typical applications are AC solid-state switches, indust.