| Part Number | 2N720A |
| Manufacturer | Texas Instruments |
| Title | Silicon NPN Transistor |
| Description | OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Tex... |
| Features |
asheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: ... |
| File Size | 1.66MB |
| Datasheet |
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2N720 : OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Texas Instruments Databook 1968/69 Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / l.
2N720A : The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector–emitter Voltage (I R = 0) Emitter–base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 – 65 to 200 Unit V V V mA W W °C 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 °C/.
2N720A : TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER IC PT 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 97 58 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 .
2N720A : SYMBOL Collector Emitter Voltage VCEO Collector - Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @Ta=25ºC PD Derate Above 25ºC Power Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut off Current BVCEO (sus)* BVCBO BVEBO ICBO IC=30mA,IB=0 IC=100µA.IE=0 IE=100µA, IC=0 VCB=90V, IE=0 Emitter Cut off Current Collector Emi.
2N720A : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage %Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO VCER VCBO v EBO Pd pd TJ. Tstg Value 80 100 120 7.0 0.5 2.86 1.8 10.3 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C Symbol R&jc Max 97 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, RrjE ^ 10 oh.