2N720

2N720A : The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector–emitter Voltage (I R = 0) Emitter–base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb ≤ 25 °C at T cas e ≤ 25 °C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 – 65 to 200 Unit V V V mA W W °C 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 °C/.

2N720A : OEM: Texas Instruments Transistor 2N720 Datasheet Silicon NPN Transistor 2N720 120V / 1A / 1,5W DATASHEET OEM – Texas Instruments Source: Texas Instruments Databook 1968/69 Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / liability OEM: Texas Instruments Transistor 2N720 Datasheet Datasheet Rev. 1.3 – 03/19 – data without warranty / l.

2N720A : TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices 2N720A 2N1893 2N1893S Qualified Level JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector-Emitter Voltage (RBE = 10 Ω) Collector Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) VCEO VCBO VEBO VCER IC PT 80 120 7.0 100 500 2N720A 2N1893, S 0.5 0.8 1.8 3.0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Thermal Resistance, Junction-to-Case RθJC 97 58 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 .

2N720A : SYMBOL Collector Emitter Voltage VCEO Collector - Emitter Voltage VCER Collector Base Voltage VCBO Emitter Base Voltage VEBO Power Dissipation @Ta=25ºC PD Derate Above 25ºC Power Dissipation @ Tc=25ºC PD Derate Above 25ºC Operating and Storage Junction Tj, Tstg Temperature Range THERMAL RESISTANCE Junction to Case Rth(j-c) ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise ) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Breakdown Voltage Collector Base Breakdown Voltage Emitter Base Breakdown Voltage Collector Cut off Current BVCEO (sus)* BVCBO BVEBO ICBO IC=30mA,IB=0 IC=100µA.IE=0 IE=100µA, IC=0 VCB=90V, IE=0 Emitter Cut off Current Collector Emi.

2N720A : MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage %Total Device Dissipation Ta = 25°C Derate above 25°C Total Device Dissipation (a Tq = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol v CEO VCER VCBO v EBO Pd pd TJ. Tstg Value 80 100 120 7.0 0.5 2.86 1.8 10.3 - 65 to + 200 Unit Vdc Vdc Vdc Vdc Watt mW/°C Watts mW/°C °C Symbol R&jc Max 97 Unit °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.; Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltaged) dc = 100 mAdc, RrjE ^ 10 oh.

2N721 : 1212N (SILICON) PNP silicon annular transistor for high-frequency general-purpose amplifier applications. CASE 22 (TO.18) Collector connected to case MAXIMUM RAilNGS Rating Symbol Collector-Emitter Voltage Collector-Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Total Device Dissipation @ TA=25°C (Derate above 25DC) VCEO VCER VCB VEB PD Total Device Dissipation @ TC",25°C (Derate above 25°C) TC =100°C PD Operating & Stbrage Junction Temperature Range TJI Tstg Value 35 50 50 5.0 0.40 2.67 1.5 0.75 10 -65 to +200 Unit Vdc Vdc Vdc Vdc Watts mW!OC Watts mW/oC DC 2-83 2N721 (continued) ELECTRICAL CHARACTERISTICS cr. = 25'C _ Characteristic OFF CHARACTERIS.

2N7218 : This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I ti s ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy p u l s ec i r c u i t s . PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25° C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Vo l t s 100 200 400 500 R DS(on) .070 . 1 8 . 5 5 . 8 5 I D , Amps 28 18 10 8 S C H E M ATIC MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .685 .665 .800 .790 .550 .530 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .

2N7219 : This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I ti s ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy p u l s ec i r c u i t s . PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25° C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Vo l t s 100 200 400 500 R DS(on) .070 . 1 8 . 5 5 . 8 5 I D , Amps 28 18 10 8 S C H E M ATIC MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .685 .665 .800 .790 .550 .530 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .

2N7219 : IRFM240 2N7219 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • N–CHANNEL MOSFET • HIGH VOLTAGE 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 200V 18A 0.18Ω 1 2 3 20.07 (0.790) 20.32 (0.800) 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • HERMETIC ISOLATED TO-254 PACKAGE 3.81 (0.150) BSC • ELECTRICALLY ISOLATED TO–254AA – Isolated Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VGS ID IDM PD IAR dv / dt RθJC RθJA TJ , TS.

2N722 : 2N722 Dimensions in mm (inches). 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. Bipolar NPN Device. VCEO = 35V 0.48 (0.019) 0.41 (0.016) dia. IC = All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 2 1 2.54 (0.100) Nom. TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter VCEO* IC(CONT) hFE ft PD Test Conditions Min. Typ. Max. 35 Units V A @ 5.0/1m (VCE / IC) 25 Hz 0.4 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab .

2N722 : 2N722 (SILICON) (2N1132 JAN AVAILABLE) 2Nl132 2Nl132A 2N2303 PNPSILICON SWITCHING TRANSISTORS PNP SILICON ANNULAR TRANSISTORS ... designed for medium-current switching and amplifier applications. MAXIMUM RATINGS Rating Symbol 2N722 2N1132 2N1132A 2N2303 Unit Collector-Emitter Voltage VCEO 35 35 40 35 Vdc Collector-Emitter Voltage (RBE • 10 Ohms) VCER 50 50 50 Vdc 50 Collector-Base Voltage Emitter-Base Voltage Collector Current T~~~a~:~~v~;:j~atlon @TA = 25°C VCB VEB IC PD Total Device Dissipation@Tc=2SoC Derate above 25° C Operating Junction Temperature Range Storage Temperature Range PD TJ .Tstg 50 5.0 - 400 2.67 1.5 10 50 60 5.0 5.0 - 600 600 600 4.0 4.0 2.0 13.3 2.

2N7221 : This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I ti s ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy p u l s ec i r c u i t s . PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25° C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Vo l t s 100 200 400 500 R DS(on) .070 . 1 8 . 5 5 . 8 5 I D , Amps 28 18 10 8 S C H E M ATIC MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .685 .665 .800 .790 .550 .530 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .

2N7222 : This hermetically packaged QPL product features the latest advanced MOSFET and packaging technology. I ti s ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy p u l s ec i r c u i t s . PRIMARY ELECTRICAL CHARACTERISTICS @ TC = 25° C PART NUMBER 2N7218 2N7219 2N7221 2N7222 V DS, Vo l t s 100 200 400 500 R DS(on) .070 . 1 8 . 5 5 . 8 5 I D , Amps 28 18 10 8 S C H E M ATIC MECHANICAL OUTLINE .545 .535 .144 DIA. .050 .040 .685 .665 .800 .790 .550 .530 Pin Connection Pin 1: Drain Pin 2: Source Pin 3: Gate .

2N7224 : LAB MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) SEME 2N7224 IRFM150 N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES • REPETITIVE AVALANCHE RATING • ISOLATED AND HERMETICALLY SEALED • ALTERNATIVE TO TO-3 PACKAGE 100V 34A 0.070W 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS • EASE OF PARALLELING TO–254AA – Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise .

2N7224JANTX : TEMIC Siliconix 2N7224JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary Vns(V) 100 fnS(on) (Q) 0.081 In (A) 34 Parametric limits in accordance with MIL-S-I9500/592 where applicable. TO-254AA Hermetic Package o D Case Isolated DSG Top View S N-Channel MOSFET =Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150°C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IT c=25°C ITc= 100°C ITc=25°C Symbol Vns Vas In InM IAR Pn TJ,Tstg Limit 100 ±20 34 21 136 34 150 -55 to 150 Unit V A W °C Thermal Resistanc.

2N7224JANTXV : TEMIC Siliconix 2N7224JANTX/JANTXV N-Channel Enhancement-Mode Transistors Product Summary Vns(V) 100 fnS(on) (Q) 0.081 In (A) 34 Parametric limits in accordance with MIL-S-I9500/592 where applicable. TO-254AA Hermetic Package o D Case Isolated DSG Top View S N-Channel MOSFET =Absolute Maximum Ratings (Tc 25°C Unless Otherwise Noted) Drain-Source Voltage Gate-Source Voltage Parameter Continuous Drain Current (TJ = 150°C) Pulsed Drain Current Avalanche Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IT c=25°C ITc= 100°C ITc=25°C Symbol Vns Vas In InM IAR Pn TJ,Tstg Limit 100 ±20 34 21 136 34 150 -55 to 150 Unit V A W °C Thermal Resistanc.