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RN2504

Part Number RN2504
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, ...
Features dissipation Junction temperature Storage temperature range RN2501 to 2506 RN2501 to 2504 RN2505, 2506 RN2501 to 2506 VCBO VCEO VEBO IC PC* Tj Tstg −50 V −50 V −10 V −5 −100 mA 300 mW 150 °C −55 to150 °C Note: Using continuously under heavy loads (e.g. the application of high tempera...

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RN2501 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2502 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2503 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2505 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2506 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2507 : RN2507 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2507 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process  Complementary to RN1507 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2507 10 47 1.BASE 1 (B1) 2.EMITTER (E) 3.BASE 2 (B2) 4.COLLECTOR 2 (C2) 5.COLLECTOR 1 (C1) SMV JEDEC ― JEITA ― TOSHIBA 2-3L1S Weight: 14mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Character.




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