Part Number | RN2504 |
Manufacturer | Toshiba |
Title | Silicon PNP Epitaxial Type Transistor |
Description | RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, ... |
Features |
dissipation Junction temperature Storage temperature range
RN2501 to 2506 RN2501 to 2504 RN2505, 2506
RN2501 to 2506
VCBO VCEO
VEBO
IC PC* Tj Tstg
−50
V
−50
V
−10 V
−5
−100
mA
300
mW
150
°C
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high tempera...
|
File Size | 1.52MB |
Datasheet |
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RN2501 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .
RN2502 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .
RN2503 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .
RN2505 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .
RN2506 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Various resistance values are available to suit various circuit designs. Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .
RN2507 : RN2507 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2507 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Including two devices in SMV (super mini type with 5 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1507 Equivalent Circuit and Bias Resistor Values Part No. R1 (kΩ) R2 (kΩ) RN2507 10 47 1.BASE 1 (B1) 2.EMITTER (E) 3.BASE 2 (B2) 4.COLLECTOR 2 (C2) 5.COLLECTOR 1 (C1) SMV JEDEC ― JEITA ― TOSHIBA 2-3L1S Weight: 14mg (typ.) Absolute Maximum Ratings (Ta = 25C) (Q1, Q2 Common) Character.