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RN2507

Part Number RN2507
Manufacturer Toshiba
Title Silicon PNP Epitaxial Type Transistor
Description RN2507 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2507 Unit: mm Switching, Inverter Ci...
Features 0 C −55 to150 C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature...

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RN2501 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2502 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2503 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2504 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2505 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .

RN2506 : RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit  Including two devices in SMV (super mini type with 5 leads)  With built-in bias resistors.  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment.  Various resistance values are available to suit various circuit designs.  Complementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 .




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