Part Number | RN4602 |
Manufacturer | Toshiba |
Title | Silicon NPN/PNP Epitaxial Type Transistor |
Description | TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4602 Switching, Inverter Circuit, Interfac... |
Features |
nic Devices & Storage Corporation
Start of commercial production
1988-11
2019-11-01
RN4602
Q1, Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation Junction temperature Storage temperature range
PC * Tj Tstg
300
mW
150
°C
−55 to 1...
|
File Size | 721.03KB |
Datasheet |
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RN4601 : RN4601 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4601 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ R2: 4.7kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rati.
RN4603 : RN4603 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4603 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rating.
RN4604 : RN4604 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4604 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO.
RN4605 : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4605 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4605 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO.
RN4606 : RN4606 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4606 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCE.
RN4607 : TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4607 Unit: mm 1 Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −6 −100 Q2 Absolute Maximum Ratings.
RN4608 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4608 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEB.
RN4609 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4609 Unit: mm Including two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −15 −100 JEDEC ― JEITA ― TOSHIBA .