RN4606

RN4601 : RN4601 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4601 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 4.7kΩ R2: 4.7kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rati.

RN4602 : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4602 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4602 Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 10kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector cur.

RN4603 : RN4603 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4603 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −10 −100 Q2 Absolute Maximum Rating.

RN4604 : RN4604 TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4604 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015g (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO.

RN4605 : TOSHIBA Transistor Silicon PNP · NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN4605 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4605 Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and miniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 2.2kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO.

RN4607 : TOSHIBA Transistor Silicon PNP/NPN Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4607 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4607 Unit: mm １  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 10kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −6 −100 Q2 Absolute Maximum Ratings.

RN4608 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4608 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4608 Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 22kΩ R2: 47kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 15 mg (typ.) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEB.

RN4609 : TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN4609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit RN4609 Unit: mm  Including two devices in SM6 (super mini type with 6 leads)  With built-in bias resistors  Simplify circuit design  Reduce a quantity of parts and manufacturing process and iniaturize equipment. Equivalent Circuit and Bias Resistor Values R1: 47kΩ R2: 22kΩ (Q1, Q2 Common) Q1 Absolute Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating −50 −50 −15 −100 JEDEC ― JEITA ― TOSHIBA .