SIF2N60C

SIF2N60 : Shenzhen SI Semiconductors Co., LTD. N- MOS / N-CHANNEL POWER MOSFET Product Specification SIF2N60 FEATURES LOW ON-RESISTANCE ■RoHS COMPLIANT FAST SWITCHING RoHS HIGH INPUT RESISTANCE APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY Tc=25°C Absolute Maximum Ratings Tc=25°C PARAMETER Drain-source Voltage gate-source Voltage SYMBOL VALUE VDS 600 VGS ±20 TO-220 UNIT V V Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ Drain Current Pulsed ① ID 2.0 A ID 1.25 A IDM 8 A Power Dissipation Junction Temperature Storage Temperature PD 54 W Tj 150 °C TSTG -55-150 °C Single Pulse Avalanche Energy EAS 120 mJ ② VDS=60.

SIF2N60D : Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D ●： RoHS ■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT ●： ●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） PARAMETER SYMBOL - Drain-source Voltage VDS - gate-source Voltage VGS Continuous Drain Current ID TC=25℃ Continuous Drain Current ID TC=100℃ VALUE 600 ±30 2.0 1.25 TO-220/220FP UNIT V V A A Drain Current －Pulsed ① IDM 8 A Power Dissipation Ptot Junction Temperature Tj Storage Temperature TSTG Single Pulse Avalanche Energ.