| Part Number | SIF2N60 |
| Manufacturer | SI Semiconductors |
| Title | N-CHANNEL POWER MOSFET |
| Description | Shenzhen SI Semiconductors Co., LTD. N- MOS / N-CHANNEL POWER MOSFET Product Specification SIF2N60 FEATURES LOW ON-RESISTANCE ■RoHS COMPLIANT ... |
| Features |
LOW ON-RESISTANCE
■RoHS COMPLIANT FAST SWITCHING RoHS HIGH INPUT RESISTANCE APPLICATION: ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY Tc=25°C Absolute Maximum Ratings Tc=25°C PARAMETER Drain-source Voltage gate-source Voltage SYMBOL VALUE VDS 600 VGS ±20 TO-220 UNIT... |
| File Size | 168.96KB |
| Datasheet |
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SIF2N60C : Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60C ●： RoHS ■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT ●： ●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） TO-251/251S/252 PARAMETER SYMBOL VALUE UNIT - Drain-source Voltage VDS 600 V - gate-source Voltage VGS ±30 V Continuous Drain Current TC=25℃ Continuous Drain Current TC=100℃ ID 2.0* A ID 1.25* A VDS=600V RDS(ON)=4.5Ω ID=2.0A Drain Current －Pulsed ① IDM 8.0* A Power Dissipation Junction Temperature Storage Temperature Single.
SIF2N60D : Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60D ●： RoHS ■ ●FEATURES：■LOW ON-RESISTANCE ■FAST SWITCHING ■HIGH INPUT RESISTANCE RoHS COMPLIANT ●： ●APPLICATION: ■ELECTRONIC BALLAST■ELECTRONIC TRANSFORMER■SWITCH MODE POWER SUPPLY ●（Tc=25°C） ●Absolute Maximum Ratings（Tc=25°C） PARAMETER SYMBOL - Drain-source Voltage VDS - gate-source Voltage VGS Continuous Drain Current ID TC=25℃ Continuous Drain Current ID TC=100℃ VALUE 600 ±30 2.0 1.25 TO-220/220FP UNIT V V A A Drain Current －Pulsed ① IDM 8 A Power Dissipation Ptot Junction Temperature Tj Storage Temperature TSTG Single Pulse Avalanche Energ.