2SA1164

2SA1160 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC Tj Tstg.

2SA1160 : Transys Electronics L I M I T E D TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SA1160 FEATURE Power dissipation TRANSISTOR (PNP) 2. COLLECTOR 3. BASE ww.DataSheet4U.com PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Transition frequency Output ca.

2SA1160 : TO-92LM PNP 。Silicon PNP transistor in a TO-92LM Plastic Package. / Features ，,。  High DC current gain and excellent hFE linearity, low saturation voltage. / Applications ,。 Strobe flash, medium power amplifier applications. / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range A 140~280 B 200~400 C 300~600 http://www.fsbrec.com 1/6 2SA1160 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Current – Continuous(Pulse) Base Current - Continuous Colle.

2SA1160 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SA1160 TRANSISTOR (PNP) FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage TO – 92L 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -20 -10 -6 -2 900 139 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-ba.

2SA1162 : Bipolar Transistors Silicon PNP Epitaxial Type 2SA1162 1. Applications • Low-Frequency Amplifiers • Audio Frequency General Purpose Amplifier Applications 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V (3) High collector current: IC = -150 mA (max) (4) High hFE: hFE = 70 to 400 (5) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) (6) Low noise: NF = 1 dB (typ.), 10 dB (max) (7) Complementary to 2SC2712 3. Packaging 2SA1162 S-Mini 1: Base 2: Emitter 3: Collector ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1982-12 2021-10-06 Rev.3.0 4. Orderable part numb.

2SA1162 : FEATURES Low noise : NF= 1dB(Typ.),10dB (Max.) Complementary to 2SC2712. Small Package. Plastic-Encapsulate Transistors 2SA1162(PNP) MAXIMUM RATINGS (TA=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature unless otherwise noted) Symbol Value VCBO -50 VCEO -50 VEBO -5 IC -150 PC 150 TJ 125 Tstg -55 to +150 Unit V V V mA mW ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage VCBO IC=-100u A,IE=0 Collector-emitter breakdown voltage VCEO IC=-1mA,IB=0 Emitter-base break.

2SA1162 : 2SA1162 Silicon PNP Epitaxial Type Transistor Features • High voltage and high current: VCEO = -50 V, IC = 150 mA (max) • Low noise: NF = 1dB (typ.), 10dB (max) • Small package • RoHS compliant package Mechanical Data • Case: Molded plastic • Epoxy: UL94-V0 rate flame retardant Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [2SA1162] © Bruckewell Technology Corporation Rev. A -2014 2SA1162 Silicon PNP Epitaxial Type Transistor MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATING @ Ta=25°C unless otherwise specified Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collecto.

2SA1162 : SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features ,,,, 2SC2712 。 High voltage and current, excellent hFE linearity, high hFE, low noise, complementary to 2SC2712.  / Applications 。 Audio frequency general purpose amplifier applications.  / Equivalent Circuit / Pinning 3 2 1 PIN1：Emitter PIN 2：Base PIN 3：Collector / hFE Classifications & Marking hFE Classifications Symbol hFE Range O 70～140 Y 120～240 Marking HSO HSY GR 200～400 HSG http://www.fsbrec.com 1/6 2SA1162 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Base Current C.

2SA1162 : Production specification Silicon Epitaxial Planar Transistor FEATURES  Excellent hFE linearity.  Commplementary to 2SC2712.  High voltage and high current.  Low noise. Pb Lead-free 2SA1162 APPLICATIONS  General purpose application. ORDERING INFORMATION Type No. Marking 2SA1162 SO/SY/SG SOT-23 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage -50 VCEO VEBO Collector-Emitter Voltage Emitter-Base Voltage -50 -5 IC Collector Current -Continuous -150 IB Base Current PC Collector Dissipation -30 150 Tj,Tstg Junction and Storage Temperature -55 to +125 Units V V V mA mA mW ℃ C092 Rev.A www.gm.

2SA1162 : Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors SOT-23-3L 2SA1162 FEATURES Power dissipation PCM TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 w.DataSheet4U.com : 150 mW (Tamb=25℃) 0. 025 0. 95¡ À 2. 80¡ À 0. 05 1. 60¡ À0. 05 Collector current : 150 mA ICM Collector-base voltage V V(BR)CBO : -50 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector .

2SA1162 : BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z z z Low noise:NF=1dB(Typ),10dB(Max). Commplementary to 2SC2712. Small package. Production specification 2SA1162 Pb Lead-free www.DataSheet4U.com APPLICATIONS z General purpose application. SOT-23 ORDERING INFORMATION Type No. 2SA1162 Marking SO/SY/SG Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Junction and Storage Temperature Value -50 -50 -5 -150 150 -55~125 Units V V V mA mW ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless othe.

2SA1162 : SMD Type Silicon PNP Epitaxial Type Transistor 2SA1162 SOT-23 Transistors Features High voltage and high current: VCEO = -50 V, IC = ?150 mA (max) +0.1 2.4-0.1 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Low noise: NF = 1dB (typ.), 10dB (max) Small package +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -150 -30 150 125 -55 to +125 Unit V V V mA mA mW.

2SA1162 : 2SA1 1 62 TRANSISTOR(PNP) SOT-23 FEATURES . Low noise : NF= 1dB(Typ.),10dB (Max.) . Complementary to 2SC2712. . Small Package. MARKING: SO , SY , SG MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PD TJ Tstg Parameter 1. BASE 2. EMITTER 3. COLLECTOR Value -50 -50 -5 -150 150 125 -55-125 Units V V V mA mW ℃ ℃ Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off curren.

2SA1162 : 2SA1162 Elektronische Bauelemente -0.15A, -50V PNP Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES   SOT-23 A 3 Low Noise: NF=1 dB(Typ.), 10 dB(Max.) Complements of the 2SC2712 L 3 MECHANICAL DATA   Top View 1 2 Case: SOT-23, Molded Plastic Weight: 0.008 grams(approx.) C B 1 2 K E D CLASSIFICATION OF hFE Product-Rank Range Marking 2SA1162-O 70~140 SO 2SA1162-Y 120~240 SY 2SA1162-GR 200~400 SG F REF. A B C D E F G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H REF. G H J K L J Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02 PACKAGE INFORMATION Pac.

2SA1162 : RoHS 2SA1162 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER DComplemen to 2SC2712 Collector-current:Ic=-100mA .,LTCollector-Emiller Voltage:VCE=-45V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 OUnit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage Collector-Emitter Voltage NEmitter-Base Voltage Collector Current OCollector Dissipation Ta=25oC* Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating -50 -45 -5 -100 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW O C O C Electrical Characteristics (Ta=25 oC) TParameter Symbol MIN. TYP. MAX. Unit Condition CCollector-Base Breakdown Vo.

2SA1163 : TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications 2SA1163 Unit: mm  AEC-Q101 Qualified (Note1).  High voltage: VCEO = −120 V  Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = 0.95 (typ.)  High hFE: hFE = 200 to 700  Low noise: NF = 1 dB (typ.), 10 dB (max)  Complementary to 2SC2713  Small package Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol Rating .

2SA1163 : SMD Type Silicon PNP Epitaxial Type 2SA1163 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm High voltage. +0.1 2.4-0.1 Small package. High hFE. Low noise. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -120 -120 -5 -100 -20 150 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter c.