Part Number | 2SC979 |
Manufacturer | Toshiba |
Title | SILICON NPN TRANSISTOR |
Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING AP... |
Features |
• High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 rf 2... |
File Size | 116.85KB |
Datasheet |
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2SC979 : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .
2SC979A : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS. FEATURES • High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 rf 2(2.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC979 2SC979A Collector- Emitter Voltage Emitter-Base Voltage 2SC979 2SC979A Collector Current Base Current Collector Power Dissipation Junction Temperat.
2SC979A : www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr Datasheet pdf - http://www.DataSheet4U.net/ .
2SC97A : www.DataSheet4U.com .