| Part Number | 2SC979A |
| Manufacturer | Toshiba |
| Title | SILICON NPN TRANSISTOR |
| Description | SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING AP... |
| Features |
• High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 rf 2... |
| File Size | 116.85KB |
| Datasheet |
|
2SC979 : SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS. FEATURES • High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 rf 2(2.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC979 2SC979A Collector- Emitter Voltage Emitter-Base Voltage 2SC979 2SC979A Collector Current Base Current Collector Power Dissipation Junction Temperat.
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