| Part Number | 2SA505 |
| Manufacturer | Toshiba |
| Title | Silicon PNP Transistor |
| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES • Low Collector Saturation Voltage : VCE ( S at)=-0-32V (... |
| Features |
• Low Collector Saturation Voltage : VCE ( S at)=-0-32V (Typ.) • Complementary to 2SC495 and 2SC496. 2SA496 2SA505, 7.9MAX. Unit in mm MAXIMUM RATINGS (Ta=25°c) CHARACTERISTIC Collector-Base Voltage 2SA505 2SA496 Collector-Emitter Voltage Emitter-Base Voltage Collector Current 2SA505 2SA496... |
| File Size | 91.85KB |
| Datasheet |
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2SA500 : II SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA499 2SA500 HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES: • High Breakdown Voltage : VcBO=-50V (Min.) (2SA499) : VCBO=-30V (Min.) (2SA500) • High Transition Frequency : f T=250MHz (Typ.) • Fast Switching Speed : t on=25ns (Typ.) • Complementary to 2SC400 and 2SC979. INDUSTRIAL APPLICATIONS Unit in mm MZf4.95MAX 00.45 02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage 2SA499 2SA500 2SA499 2SA500 Emitter- Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO ic IB PC .
2SA503 : SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA) • Complementary to 2SC503 and 2SC504. (Typ.) 1 X srd CO 6 00.45 1 11 ^05.08 A 3\ M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Junction Temp.
2SA504 : SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : f T=80MHz (Typ.) • High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.12V (at I c=-150mA, I B=-15mA) • Complementary to 2SC503 and 2SC504. (Typ.) 1 X srd CO 6 00.45 1 11 ^05.08 A 3\ M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Junction Temp.
2SA505 : ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -50V (Min.) ·Collector-Emitter Saturation Voltage- VCE(sat)= -0.8V (Max.)@ IC= -500mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous 1 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & isc.
2SA509 : http://www.Datasheet4U.com .