DatasheetsPDF.com

2SA503

Toshiba
Part Number 2SA503
Manufacturer Toshiba
Description Silicon PNP Transistor
Published Aug 13, 2008
Detailed Description SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm H...
Datasheet PDF File 2SA503 PDF File

2SA503
2SA503

Overview
SI LICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED SWITCHING APPLICATIONS.
FEATURES • High Transition Frequency : f T=80MHz (Typ.
) • High Breakdown Voltage : VCEO=-80V : VcEO=- 60v (2SA503) (2SA504) • Low Saturation Voltage : VcE(sat)=-0.
12V (at I c=-150mA, I B=-15mA) • Complementary to 2SC503 and 2SC504.
(Typ.
) <1 X < srd CO <6 00.
45 1 11 ^05.
08 A 3\ M so 9 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SA503 2SA504 Collector-Emitter Voltage 2SA503 2SA504 SYMBOL v CBO VCEO Emitter-Base Voltage VEBO Collector Current ic Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range Ta=25°C Tc=25°C IB PC T i T stg RATING -100 -80 -80 -60 -5 -600 -100 800 6 175 -65VL75 UNIT V V V mA mA mW W °C °C 1.
EMITTER 2.
BASE 3.
COLLECTOR(CASE) JEDEC EIAJ TOSHIBA TO - 39 TC - 5,TB - 5B 2 - 8B1A Weight : 1.
13g ELECTRICAL CHARACTERISTIC...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)