2SA940

2SA940 : • Collector-Emitter Breakdown Voltage :V(BR)CEo=-150V(Min) • DC Current Gain : hFE=40-140@lc=-0.5A • Complement to Type 2SC2073 APPLICATIONS • Designed for use in general purpose power amplifier, vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Ic Collector Current-Continuous Total Power Dissipation PC @ TC=25'C Tj Junction Temperature Tstg Storage Temperature Range -150 V -150 V -5 V -1.5 A 25 W 150 °c -55~150 r THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX 5.0 UNIT •c/w /"*'!•, ft P.

2SA940 : ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -150 V -5 V IC Collector Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range -1.5 A 25 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMET.

2SA940 : Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 2SA940 TRANSISTOR (PNP) TO-220 1. BASE 2. COLLECTOR FEATURES Power dissipation PCM : 1.5 W (Tamb=25℃) 3. EMITTER Collector current : -1.5 A ICM Collector-base voltage V V(BR)CBO : -150 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC.

2SA940 : 2SA940 ® 2SA940 Pb Free Plating Product Pb PNP Silicon Epitaxial Power Transistor FEATURES z Complements the 2SC2073. 9.90±0.20 φ ± 60 3. 0. 20 4.50±0.20 1.30±0.20 15.70±0.20 13.08±0.20 COLLECTOR 2 BASE 1 9.19±0.20 z Vertical Output Applications. 2.80±0.20 z Power Amplifier Applications. 6.50±0.20 APPLICATIONS 3 EMITTER 1. BASE 2. COLLECTOR 3. EMITTER 3 12 0.80±0.20 2.54typ 2.54typ 0.50±0.20 Dimensions in Millimeters TO-220C Package Dimension MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol VCBO VCEO VEBO IC IB PC Tj,Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Curre.

2SA940 : Features 3 2 1 — Wide safe Operating Area. — Complementary to 2SC2703 1. BASE 2. COLLECTOR 3. EMITTER 2SA940(PNP) TO-220 Transistor TO-220 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Dimensions in inches and (millimeters) Symbol VCBO VCEO VEBO IC PC Tj Tstg Paramenter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Range Value -150 -150 -5 -1.5 1.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC =-100μA, IE=0 .

2SA940 : Epitaxial Planar PNP Transistor FEATURES z Complements the 2SC2073. APPLICATIONS z Power Amplifier Applications. z Vertical Output Applications. Pb Lead-free Production specification 2SA940 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage -150 V VCEO VEBO IC IB PC Tj,Tstg Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Ta=25℃ Tc=25℃ Junction and Storage Temperature -150 V -5 V -1.5 A -0.5 A 1.5 W 25 -55 to +150 ℃ X027 Rev.A www.gmicroelec.com 1 Production specification Epitaxial Planar PNP Transistor 2SA940 ELECTRICAL.

2SA940 : , at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R208-059.a .

2SA940A : 2SA940A TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT Process) 2SA940A Power Amplifier Applications Vertical Output Applications Unit: mm • Complementary to 2SC2073A Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −150 −150 −5 −1.5 −0.5 2.0 25 150 −55 to 150 Unit V V V A A W °C °C Electrical Characteristics (Tc = 25°C) JEDEC ― JEITA SC-67 TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Characteristics Collector cut-off current Emitt.

2SA940A : TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package.  / Features 2SC2073A 。 Complementary to 2SC2073A. / Applications 。 Power amplifier applications, vertical output applications. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SA940A Rev.F Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Base Current Collector Power Dissipation Collector Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO .

2SA941 : .

2SA942 : .

2SA949 : 2SA949 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA949 Driver-Stage Audio Amplifier Applications High-Voltage Switching Applications Unit: mm • • • High breakdown voltage: VCEO = −150 V Low output capacitance: Cob = 4.0 pF (typ.) High transition frequency: fT = 120 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −150 −150 −5 −50 5 800 150 −55 to 150 Unit V V V mA mA mW °C °C JEDEC JEITA TO-92MOD ― TOSHIBA 2-5J1A Note1: Using continuously un.