2SB688

2SB681 : ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier use. ·Recommended for use in output stage of 80 watts power amplifier . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB681 isc website：www.iscsemi.com 1 isc & iscsemi is registered tradema.

2SB681 : ·With TO-3 package ·High power dissipation APPLICATIONS ·Power amplifier applications ·Recommended for high-power high-fidelity audio frequency amplifier output stage PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE -150 -150 -5 -12 -20 100 150 -40~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.com Prod.

2SB682 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -4 A 1.5 W 30 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is r.

2SB683 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.5 W 40 150 ℃ Tstg Storage Temperature Range -40~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is r.

2SB686 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Complement to Type 2SD716 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -6 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 is.

2SB686 : ·With TO-3P(I) package ·Complement to type 2SD716 APPLICATIONS ·Power amplifier applications ·Recommend for 30~35W high-fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IE PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Emitter current Total power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -5 -6 6 60 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U.co.

2SB686 : : SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SB686 POWER AMPLIFIER APPLICATIONS. 15.9MAX. Unit in mm 03.2±Q .2 FEATURES • Complementary to 2SD716. • Recommended for 30 ^ 35W High-Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage Collector Current 'EBO ic Emitter Current Collector Power DissipFation ~ . (Tc=25°c: Junction Temperature PC Storage Temperature Range L stg RATING -100 -100 -5 60 150 -55VL50 UNIT V ^W,s 4- °[ d =i + 0.30 1.0—0.25 w MM 5.45 ±0.2 5.45±0.2 n° —u 0? ^1 1 a 00 ^n 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER .

2SB688 : ·With TO-3P(I) package ·Complement to type 2SD718 APPLICATIONS ·Power amplifier applications ·Recommend for 45~50W audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO IC Emitter-base voltage Collector current IB Base current PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE -120 -120 -5 -8 -0.8 80 150 -55~150 UNIT V V V A A W SavantIC Semiconductor Silicon PNP P.

2SB688 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·Complement to Type 2SD718 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency power amplifier applications ·Recommend for 45-50W audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -8 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -0.8 A 80 W 150 ℃ Tstg Storage Temperature .

2SB688 : SEMICONDUCTOR TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 2SB688 1 TO-3P ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC IB PC TJ TSTG 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L RATINGS -120 -120 -5 -10 -1 80 150 -40 ~ +150 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-off Current.

2SB688 : JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 2SB688 TRANSISTOR (PNP) FEATURES z High Breakdown Voltage z Complement to Type 2SD718 APPLICATIONS z Power Amplifier Applications TO – 3P 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -120 -120 -5 -8 3 42 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parame.

2SB688 : UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR HIGH POWER AMPLIFIER APPLICATION FEATURES * Complementary to 2SD718. * Recommended for 45 ~ 50W Audio Frequency Amplifier Output Stage. 1 TO-3P 1: BASE 2: COLLECTOR 3: EMITTER *Pb-free plating product number: 2SB688L ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation (TC=25℃) Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO www.DataSheet4U.com IC IB PC TJ TSTG RATINGS -120 -120 -5 -10 -1 80 150 -40 ~ +150 UNIT V V V A A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃) PARAMETER Collector Cut-off Current Emitte.

2SB689 : ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -100V(Min) ·High Power Dissipation ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -4 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 1.8 W 40 150 ℃ Tstg Storage Temperatu.

2SB689 : ·With TO-220C package ·Low collector saturation voltage ·High power dissipation APPLICATIONS ·For low frequency power amplifier, TV vertical deflection ouptut applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 1.8 150 -45~150 Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -4 -4 -5 40 W UNIT V V V A A SavantIC Semiconductor www.DataSheet4U.com Product Specific.