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2SB681

Part Number	2SB681
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 17, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO=...
Datasheet	2SB681 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min.
) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF power amplifier use.
·Recommended for use in output stage of 80 watts power amplifier .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature -12 A 100 W 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SB681 isc website：www.
iscs...

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