BUX62 SILICON NPN BIPOLAR TRANSISTOR

BUX62 SILICON NPN BIPOLAR TRANSISTOR

SILICON NPN BIPOLAR TRANSISTOR BUX62 • Hermetic TO66 Metal Package • Designed For Driver Circuits, Switching and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCEO Collector - Emitter Voltage IC Continuous Collector Current PD.

Features

Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Document Number 10429 Website: http://www.semelab-tt.com Issue 1 Page 1 of 3 SILICON NPN BIPOLAR TRANSISTOR BUX62 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICEO Collector
  – Emitter Cut-Off Current VCE = 200V IB = 0 IEBO Emitter
  – Base Cut-Off Current VEB = 5V IC = 0 BVCEO VCE(sat)(1) Emitter-Base Cut-Off Current VEB = 6V Collector-Base Cut-Off Current IC = 2.5A IC = 0 I.