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CT20VS-8

Mitsubishi Electric Semiconductor
Part Number CT20VS-8
Manufacturer Mitsubishi Electric Semiconductor
Description IGBT
Published Mar 24, 2005
Detailed Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.5MAX. Dimensions...
Datasheet PDF File CT20VS-8 PDF File

CT20VS-8
CT20VS-8

Overview
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE CT20VS-8 OUTLINE DRAWING 1.
5MAX.
Dimensions in mm r 10.
5MAX.
4.
5 1.
3 1.
5MAX.
8.
6 ± 0.
3 9.
8 ± 0.
5 3.
0 +0.
3 –0.
5 0 +0.
3 –0 1 5 0.
8 0.
5 q w e wr 2.
6 ± 0.
4 q q GATE w COLLECTOR e EMITTER r COLLECTOR e ¡VCES .
.
.
.
400V ¡ICM .
.
.
130A TO-220S APPLICATION Strobe Flasher.
MAXIMUM RATINGS Symbol VCES VGES VGEM ICM Tj Tstg (Tc = 25°C) Parameter Collector-emitter voltage Gate-emitter voltage Peak gate-emitter voltage Collector current (Pulsed) Junction temperature Storage temperature Conditions VGE = 0V VCE = 0V, See notice 4 VCE = 0V, tw = 0.
5s See figure 1 Ratings 400 ±30 ±40 130 –40 ~ +150 –40 ~ +150 4.
5 Unit V V V A °C °C ELECTRICAL CHARACTERISTICS Symbol V(BR)CES ICES IGES VGE(th) Parameter (Tj = 25°C) Test conditions IC = 1mA, VGE = 0V VCE = 400V, VGE = 0V VGE = ±40V, VCE = 0V VCE = 10V, IC = 1mA Limits Min.
450 — — — Typ.
— — — — Max.
— 10 ±0.
1 7.
0 Unit V µA µA V Feb.
1999 Collector-emitter breakdown voltage Collector-emitter leakage current Gate-emitter leakage current Gate-emitter threshold voltage (1.
5) MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT20VS-8 STROBE FLASHER USE PERFORMANCE CURVES MAXIMUM PULSE COLLECTOR CURRENT 200 CM = 800µF 160 < 50°C TC = PULSE COLLECTOR CURRENT ICM (A) MAXIMUM PULSE COLLECTOR CURRENT 2000 MAIN CAPACITOR CM (µF) 1600 120 1200 80 800 40 < 70°C TC = 400 VCM = 350V TC < = 70°C VGE > = 28V 80 100 120 140 160 0 0 10 20 30 40 50 0 60 GATE-EMITTER VOLTAGE VGE (V) PULSE COLLECTOR CURRENT ICP (A) Figure 1 Figure 2 APPLICATION EXAMPLE IXe TRIGGER Vtrig SIGNAL CM Vtrig + – VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700µF VGE = 28V MAXIMUM CONDITION 360V 130A 800µF Notice 1.
Gate drive voltage d...


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