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AM1214-300

Part Number	AM1214-300
Manufacturer	STMicroelectronics
Description	RF & MICROWAVE TRANSISTORS
Published	Mar 24, 2005
Detailed Description	AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS ... REFRACTORY/GOLD METALLIZATION EMITTER SITE B...
Datasheet	AM1214-300 PDF File

Overview

AM1214-300 RF & MICROWAVE TRANSISTORS L-BAND RADAR APPLICATIONS .
.
.
REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 5:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 270 W MIN.
WITH 6.
3 dB GAIN .
400 x .
500 2LFL (S038) hermetically sealed ORDER CODE AM1214-300 BRANDING 1214-300 DESCRIPTION The AM1214-300 device is a high power transistor specifically designed for L-Band radar pulsed output and driver applications.
This device is designed for operation under moderate pulse width and duty cycle pulse conditions and is capable of withstanding 5:1 output VSWR at rated RF conditions.
Low RF thermal resistance an...

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