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HYB314100BJBJL-50-

Siemens Semiconductor Group
Part Number HYB314100BJBJL-50-
Manufacturer Siemens Semiconductor Group
Description 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 1...
Datasheet PDF File HYB314100BJBJL-50- PDF File

HYB314100BJBJL-50-
HYB314100BJBJL-50-

Overview
4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM HYB 314100BJ/BJL -50/-60/-70 Advanced Information • • • • 4 194 304 words by 1-bit organization 0 to 70 ˚C operating temperature Fast Page Mode Operation Performance: -50 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns tRAC tCAC tAA tRC tPC • RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 Single + 3.
3 V (± 0.
3 V ) supply with a built-in Vbb generator • Low power dissipation max.
252 mW active (-50 version) max.
216 mW active (-60 version) max.
198 mW active (-70 version) • Standby power dissipation: 7.
2 mW max.
standby (TTL) 3.
6 mW max.
standby (CMOS) 720 µW max.
standby (CMOS) for Low Power Version Output unlatched at cycle end allows two-dimensional chip selection • Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode capability • All inputs and outputs TTL-compatible • 1024 refresh cycles / 16...


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