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HYB314175BJ-55

Part Number	HYB314175BJ-55
Manufacturer	Siemens Semiconductor Group
Description	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
Published	Mar 26, 2005
Detailed Description	3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60...
Datasheet	HYB314175BJ-55 PDF File

Overview

3.
3V 256 K x 16-Bit EDO-DRAM 3.
3V 256 K x 16-Bit EDO-DRAM (Low power version with Self Refresh) HYB 314175BJ-50/-55/-60 HYB 314175BJL-50/-55/-60 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 55 ns (-55 version) 60 ns (-60 version) CAS access time: 13ns (-50 & -55 version) 15 ns (-60 version) Cycle time: 89 ns (-50 version) 94 ns (-55 version) 104 ns (-60 version) Hype page mode (EDO) cycle time 20 ns (-50 & -55 version) 25 ns (-60 version) High data rate 50 MHz (-50 & -55 version) 40 MHz (-60 version) Single + 3.
3 V (±0.
3 V) supply with a builtin VBB generator • • • ...

Similar Datasheet

HYB314175BJ-50 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh - Siemens Semiconductor Group
HYB314175BJ-50- 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh - Siemens Semiconductor Group
HYB314175BJ-55 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh - Siemens Semiconductor Group
HYB314175BJ-60 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh - Siemens Semiconductor Group

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