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HYB314265BJ-45

Siemens Semiconductor Group
Part Number HYB314265BJ-45
Manufacturer Siemens Semiconductor Group
Description 256K x 16-Bit EDO-Dynamic RAM
Published Mar 26, 2005
Detailed Description 256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 ...
Datasheet PDF File HYB314265BJ-45 PDF File

HYB314265BJ-45
HYB314265BJ-45

Overview
256K x 16-Bit EDO-Dynamic RAM HYB 514265BJ-400/40/-45/-50 HYB 314265BJ(L)-45/-50 Preliminary Information • • • • 262 144 words by 16-bit organization 0 to 70 °C operating temperature EDO - Hyper Page Mode Performance: -400 -40 69 40 10 20 15 66 -45 79 45 12 22 18 55 -50 89 50 13 25 20 50 ns ns ns ns ns MHz • Power Supply: HYB 514265BJ-400 HYB 514265BJ-40 HYB 514265BJ-45 HYB 514265BJ-50 +5 V +5 V +5 V +5 V ±5% ±10% ±10% ±10% HYB 314265BJ(L)-45 +3.
3 V ±0.
3 V HYB 314265BJ(L)-50 +3.
3 V ±0.
3 V Read, write, read-modify-write, CAS -before RAS refresh, RAS only refresh, hidden refresh mode • Low Power Version (L) with Self Refresh and 250 µA self refresh current • • trc trac tcac taa thpc thpc • 69 40 10 20 12,5 80 2 CAS / 1 WE control All inputs and outputs TTL-compatible 512 refresh cycles / 16 ms 512 refresh cycles / 128 ms (L-version) Plastic Packages: P-SOJ-40-3 400 mil width Low Power dissipation - Active(max.
): 120mA / 120mA / 105mA / 95 mA - Standby : TTL Inputs (max.
) 2.
0 mA...


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