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HYB314400BJ-60

Siemens Semiconductor Group
Part Number HYB314400BJ-60
Manufacturer Siemens Semiconductor Group
Description 1M x 4-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 1M × 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C o...
Datasheet PDF File HYB314400BJ-60 PDF File

HYB314400BJ-60
HYB314400BJ-60

Overview
1M × 4-Bit Dynamic RAM HYB 314400BJ-50/-60 Advanced Information • 1 048 576 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode Operation • Performance: -50 -60 60 15 30 110 40 ns ns ns ns ns tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 95 35 • Fast access and cycle time Single + 3.
3 V (± 0.
3 V) supply with a built-in VBB generator • Low power dissipation max.
252 mW active (-50 version) max.
216 mW active (-60 version) • Standby power dissipation: 7.
2 mW max.
standby (LVTTL) 3.
6 mW max.
standby (LVCMOS) • Output unlatched at cycle end allows two-dimensional chip selection • Read, write, read-modify write, CAS-before-RAS refresh, RAS-only refresh, hidden refresh and test mode capability • All inputs and outputs LVTTL-compatible • 1024 refresh cycles / 16 ms • Plastic Packages: P-SOJ-26/20-2 with 300 mil width Semiconductor Group 1 1998-10-01 HYB 314400BJ-50/-60 3.
3 V 1M × 4 DRAM The HYB 314400BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit.
The HYB 314400BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user.
Multiplexed address inputs permit the HYB 314400BJ to be packed in a standard plastic P-SOJ-26/20 package.
This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment.
System oriented features include single + 3.
3 V (± 0.
3 V ) power supply, direct interfacing with high performance logic device families.
Ordering Information Type Ordering Code Package Descriptions HYB 314400BJ-50 on request HYB 314400BJ-60 on request P-SOJ-26/20-2 300 mil 3.
3 V DRAM (access time 50 ns) P-SOJ-26/20-2 300 mil 3.
3 V DRAM (access time 60 ns) Semiconductor Group 2 1998-10-01 HYB 314400BJ-50/-60 3.
3 V 1M × 4 DRAM P-SOJ-26/20-2 I/O1 I/O2 WE RAS A9 1 2 3 4 5 2...


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