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HYB3164805J-50

Siemens Semiconductor Group
Part Number HYB3164805J-50
Manufacturer Siemens Semiconductor Group
Description 8M x 8-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805J/T(L) -50/-60 HYB 3165805J/T(L) -50/-60 Preliminary ...
Datasheet PDF File HYB3164805J-50 PDF File

HYB3164805J-50
HYB3164805J-50

Overview
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805J/T(L) -50/-60 HYB 3165805J/T(L) -50/-60 Preliminary Information • • • • • • • • • • • 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.
3 V (± 0.
3V) power supply Low power dissipation max.
396 active mW ( HYB 3164805J/T(L)-50) max.
360 active mW ( HYB 3164805J/T(L)-60) max.
504 active mW ( HYB 3165805J/T(L)-50) max.
432 active mW ( HYB 3165805J/T(L)-60) 7.
2 mW standby (TTL) 720 W standby (MOS) 14.
4 mW Self Refresh (L-version only) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Hyper page mode (EDO) capability 8192 refresh cycles/128 ms , 13 R/ 11C addresses (HYB 3164805J/T(L)) 4096 refresh cycles/ 64 ms , 12 R/ 12C addresses (HYB 3165805J/T(L)) Plastic Package: P-SOJ-34-1 500 mil HYB 3164(5)805J P-TSOPII-34-1 500 mil HYB 3164(5)805T(L) Semiconductor Group 149 HYB3164(5)805J/T(L)-50/-60 8M x 8 EDO-DRAM This HYB3164(5)805 is a 64 MBit dynamic RAM organized 8 388 608 x 8 bits.
The device is fabricated in SIEMENS/IBM most advanced first generation 64Mbit CMOS silicon gate process technology.
The circuit and process design allow this device to achieve high performance and low power dissipation.
The HYB3164(5)805 operates with a single 3.
3 +/-0.
3V power supply and interfaces with either LVTTL or LVCMOS levels.
Multiplexed address inputs permit the HYB 3164(5)805 to be packaged in a 500mil wide SOJ-34 or TSOP-34 plastic package.
These packages provide high system bit densities and are compatible with commonly used automatic testing and insertion equipment.
The HYB3164(5)805TL parts have a very low power „sleep mode“ supported by Self ...


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