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HYB3165165T-50

Siemens Semiconductor Group
Part Number HYB3165165T-50
Manufacturer Siemens Semiconductor Group
Description 4M x 16-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Inf...
Datasheet PDF File HYB3165165T-50 PDF File

HYB3165165T-50
HYB3165165T-50

Overview
4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information • • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.
3 V (± 0.
3V) power supply Low power dissipation max.
396 active mW ( HYB 3164165T(L)-50) max.
360 active mW ( HYB 3164165T(L)-60) max.
504 active mW ( HYB 3165165T(L)-50) max.
432 active mW ( HYB 3165165T(L)-60) 7.
2 mW standby (TTL) 720 W standby (MOS) 14.
4 mW Self Refresh (L-version only) Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and self refresh modes Hyper page mode (EDO) capability 2 CAS / 1 WE byte control 8192 refresh cycles/128...


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