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HYB3165805BT-40

Siemens Semiconductor Group
Part Number HYB3165805BT-40
Manufacturer Siemens Semiconductor Group
Description 8M x 8-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805BJ/BT(L) -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 ...
Datasheet PDF File HYB3165805BT-40 PDF File

HYB3165805BT-40
HYB3165805BT-40

Overview
8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805BJ/BT(L) -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 Premininary Information • • • • 8 388 608 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • Single + 3.
3 V ( ± 0.
3V) power supply Low power dissipation: max.
306 active mW ( HYB 3164805BJ/BT(L)-40) max.
252 active mW ( HYB 3164805BJ/BT(L)-50) max.
216 active mW ( HYB 3164805BJ/BT(L)-60) max.
486 active mW ( HYB 3165805BJ/BT(L)-40) max.
396 active mW ( HYB 3165805BJ/BT(L)-50) max.
324 active mW ( HYB 3165805BJ/BT(L)-60) 7.
2 mW standby (LVTTL) 3.
6 mW standby (LVMOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh • Self refre...


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