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HYB3166165AT-50

Siemens Semiconductor Group
Part Number HYB3166165AT-50
Manufacturer Siemens Semiconductor Group
Description 4M x 16-Bit Dynamic RAM
Published Mar 26, 2005
Detailed Description 4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) Advanced Information • • • • HYB 3164165AT(L) -40/-50/-60 HY...
Datasheet PDF File HYB3166165AT-50 PDF File

HYB3166165AT-50
HYB3166165AT-50

Overview
4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-Version) Advanced Information • • • • HYB 3164165AT(L) -40/-50/-60 HYB 3165165AT(L) -40/-50/-60 HYB 3166165AT(L) -40/-50/-60 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • Single + 3.
3 V (± 0.
3V) power supply Low power dissipation: -40 HYB3166165AT(L) HYB3165165AT(L) HYB3164165AT(L) 1008 756 612 -50 612 504 324 -60 450 360 324 mW mW mW • • • • • 7.
2 mW standby (TTL) 3.
24 mW standby (MOS) 720 µA standby for L-version Read, write, read-modify-write, CAS-before-RAS refresh (CBR), RAS-only refresh, hidden refresh and Self Refresh (L-version only 2 CAS / 1 WE byte control 8192 refresh cycles/128 ms , 13 R/ 9C addresses (HYB 3164165AT) 4096 refresh cycles...


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