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HUF75329P3

Fairchild Semiconductor
Part Number HUF75329P3
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 26, 2005
Detailed Description HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs Thes...
Datasheet PDF File HUF75329P3 PDF File

HUF75329P3
HUF75329P3

Overview
HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet December 2001 49A, 55V, 0.
024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75329.
Features • 49A, 55V • Ultra Low On-Resistance, rDS(ON) = 0.
024Ω • Temperature Compensating PSPICE® and SABER™ Models - Available on the web at: www.
fairchildsemi.
com • Thermal Impedance PSPICE and SABER Models • Peak Current vs Pulse...


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