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HUF76131SK8

Fairchild Semiconductor
Part Number HUF76131SK8
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Mar 26, 2005
Detailed Description HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel po...
Datasheet PDF File HUF76131SK8 PDF File

HUF76131SK8
HUF76131SK8


Overview
HUF76131SK8 Data Sheet January 2003 10A, 30V, 0.
013 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is ® manufactured using the innovative UltraFET process.
This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA76131.
Features • Logic Level Gate Drive • 10A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.
013Ω • Temperature Compensating PSPICE® Model • Thermal Impedance SPICE Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol SOURCE(1) DRAIN(8) Ordering Information PART NUMBER HUF76131SK8 PACKAGE MS-012AA BRAND 76131SK8 SOURCE(2) DRAIN(7) NOTE: When ordering, use the entire part number.
Add the suffix T to obtain the variant in tape and reel, e.
g.
, HUF76131SK8T.
SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 4 ©2003 Fairchild Semiconductor Corporation HUF76131SK8 Rev.
B1 HUF76131SK8 Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified HUF76131SK8 30 30 ±20 10 Figure 5 Figure 6 2.
5 0.
02 -55 to 150 300 260 UNITS V V V A Drain to Source Voltage (Note 1).
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VDSS Drain to Gate Voltage (R GS = 20kΩ) (Note 1) .
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VDGR Gate to Source Voltage .
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