DatasheetsPDF.com

HUFA76413DK8T

Part Number	HUFA76413DK8T
Manufacturer	Fairchild Semiconductor
Description	N-Channel MOSFET
Published	Mar 26, 2005
Detailed Description	HUFA76413DK8T January 2003 HUFA76413DK8T N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.8A, 56mΩ General Descript...
Datasheet	HUFA76413DK8T PDF File

Overview

HUFA76413DK8T January 2003 HUFA76413DK8T N-Channel Logic Level UltraFET® Power MOSFET 60V, 4.
8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process.
This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance.
This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
It was designed for use in applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Applications • Motor and Load Control • Powertrain Management Features • • • • 150°C Maximum Junction Temperature UIS Capability (Single Pulse and Repetitive Pulse) Ultra-Low On-Resistance rDS(ON) = 0.
049Ω, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.
056Ω, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS = 10V) ID Continuous (TC = 25oC, VGS = 5V) Continuous (TC = 125oC, VGS = 5V, Rθ JA = 228oC/W) Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy (Note 1) Power dissipation Derate above 25oC Operating and Storage Temperature 5.
1 4.
8 1 Figure 4 260 2.
5 0.
02 -55 to 150 A A A A mJ W W/oC oC Ratings 60 ±16 Units V V Thermal Characteristics RθJA RθJA RθJA Thermal Resistance Junction to Ambient SO-8 (Note 2) Thermal Resistance Junction to Ambient SO-8 (Note 3) Thermal Resistance Junction to Ambient SO-8 (Note 4) 50 191 228 o o C/W C/W oC/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry.
For a copy of the requirements, see AEC Q101 at: http://www.
aecouncil.
com/ Reliability...

Similar Datasheet

HUFA76413DK8T N-Channel MOSFET - Fairchild Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)