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HVC133

Hitachi Semiconductor
Part Number HVC133
Manufacturer Hitachi Semiconductor
Description Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Published Mar 26, 2005
Detailed Description HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B(Z) Rev. 2 Feb 2000 Features • Low c...
Datasheet PDF File HVC133 PDF File

HVC133
HVC133

Overview
HVC133 Silicon Epitaxial Planar Pin Diode for High Frequency Switching ADE-208-423B(Z) Rev.
2 Feb 2000 Features • Low capacitance.
(C1=1.
0pF max) • Low forward resistance.
(rf=0.
7 Ω max) • Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information Type No.
HVC133 Laser Mark P3 Package Code UFP Outline Cathode mark Mark 1 P3 2 1.
Cathode 2.
Anode HVC133 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Symbol VR Pd Tj Tstg Value 30 150 125 -55 to +125 Unit V mW °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Symbol VR IR VF C1 C6 Forward resistance rf Min 30 — — — — — Typ — — — — — 0.
55 Max — 100 0.
85 1.
0 0.
9 0.
7 Ω Unit V nA V pF Test Condition I R = 1µA VR = 25V I F = 2 mA VR = 1V, f = 1 MHz VR = 6V, f = 1 MHz I F = 2mA, f = 100 MHz 2 HVC133 Main Characteristic 10 -2 10 -10 10 Forward current I F (A) -4 (A) 10 -1...


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