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HS1-65647RH

Intersil Corporation
Part Number HS1-65647RH
Manufacturer Intersil Corporation
Description Radiation Hardened 8K x 8 SOS CMOS Static RAM
Published Mar 26, 2005
Detailed Description HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 ME...
Datasheet PDF File HS1-65647RH PDF File

HS1-65647RH
HS1-65647RH

Overview
HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.
2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day • Latch-up Free • LET Threshold >250 MEV/mg/cm2 • Low Standby Supply Current 10mA (Max) • Low Operating Supply Current 100mA (2MHz) • Fast Access Time 50ns (Max), 35ns (Typ) • High Output Drive Capability • Gated Input Buffers (Gated by E2) • Six Transistor Memory Cell • Fully Static Design • Asynchronous Operation • CMOS Inputs • 5V Single Power Supply • Military Temperature Range -55oC to +125oC • Industry Standard JEDEC Pinout I/O0 INPUT DATA CIRCUIT I/O7 E2 AI COL COLUMN I/O COLUMN DECODER E1 G W CONTROL CIRCUIT TRUTH TABLE E1 X 1 0 0 0 E2 0 1 1 1 1 G X X 1 0 X W X X 1 1 0 MODE Low Power Standby Disabled Enabled Read Write Description The Intersil HS-65647RH is a fully asynchronous 8K...


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