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HS9-4080ARH

Intersil Corporation
Part Number HS9-4080ARH
Manufacturer Intersil Corporation
Description Radiation Hardened Full Bridge N-Channel FET Driver
Published Mar 26, 2005
Detailed Description HS-4080ARH Data Sheet Febuary 2000 File Number 4563.3 Radiation Hardened Full Bridge N-Channel FET Driver The HS-4080AR...
Datasheet PDF File HS9-4080ARH PDF File

HS9-4080ARH
HS9-4080ARH

Overview
HS-4080ARH Data Sheet Febuary 2000 File Number 4563.
3 Radiation Hardened Full Bridge N-Channel FET Driver The HS-4080ARH is a monolithic, high frequency, medium voltage Full Bridge N-Channel FET Driver IC.
The device includes a TTL-level input comparator, which can be used to facilitate the “hysteresis” and PWM modes of operation.
Its HEN (high enable) lead can force current to freewheel in the bottom two external power MOSFETs, maintaining the upper power MOSFETs off.
The HS-4080ARH is well suited for use in distributed DC power supplies and DC to DC converters, since it can switch at high frequencies.
These devices can also drive medium voltage motors, and two HS-4080ARHs can be used to drive high performance stepper motors, since the short minimum “on-time” can provide fine micro-stepping capability.
Short propagation delays maximize control loop crossover frequencies and dead-times, which can be adjusted to near zero to minimize distortion, resulting in precise control of the driven load.
Constructed with the Intersil dielectrically isolated Rad Hard Silicon Gate (RSG) process, these devices are immune to Single Event Latch-up and have been specifically designed to provide highly reliable performance in harsh radiation environments.
Complete your design with radiation hardened MOSFETs from Intersil.
Specifications for Rad Hard QML devices are controlled by the Defense Supply Center in Columbus (DSCC).
The SMD numbers listed here must be used when ordering.
Detailed Electrical Specifications for these devices are contained in SMD 5962-99617.
A “hot-link” is provided on our homepage for downloading.
http://www.
intersil.
com/spacedefense/space.
htm Features • Electrically Screened to SMD # 5962-99617 • QML Qualified per MIL-PRF-38535 Requirements • Radiation Environment - Gamma Dose .
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300kRAD(Si) (Max) - Latch-up Immune RSG DI Process • Drives N-Channel FET Full Bridge Including High Side Chop Capability • Bootstrap Supply Max Voltage to ...


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