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HS9-65647RH-8

Intersil Corporation
Part Number HS9-65647RH-8
Manufacturer Intersil Corporation
Description Radiation Hardened 8K x 8 SOS CMOS Static RAM
Published Mar 26, 2005
Detailed Description HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 ME...
Datasheet PDF File HS9-65647RH-8 PDF File

HS9-65647RH-8
HS9-65647RH-8


Overview
HS-65647RH August 1995 Radiation Hardened 8K x 8 SOS CMOS Static RAM Functional Diagram AI ROW ROW DECODER 128 X 512 MEMORY ARRAY Features • 1.
2 Micron Radiation Hardened SOS CMOS - Total Dose 3 x 105 RAD (Si) - Transient Upset >1 x 1011 RAD (Si)/s - Single Event Upset < 1 x 10-12 Errors/Bit-Day • Latch-up Free • LET Threshold >250 MEV/mg/cm2 • Low Standby Supply Current 10mA (Max) • Low Operating Supply Current 100mA (2MHz) • Fast Access Time 50ns (Max), 35ns (Typ) • High Output Drive Capability • Gated Input Buffers (Gated by E2) • Six Transistor Memory Cell • Fully Static Design • Asynchronous Operation • CMOS Inputs • 5V Single Power Supply • Military Temperature Range -55oC to +125oC • Industry Standard JEDEC Pinout I/O0 INPUT DATA CIRCUIT I/O7 E2 AI COL COLUMN I/O COLUMN DECODER E1 G W CONTROL CIRCUIT TRUTH TABLE E1 X 1 0 0 0 E2 0 1 1 1 1 G X X 1 0 X W X X 1 1 0 MODE Low Power Standby Disabled Enabled Read Write Description The Intersil HS-65647RH is a fully asynchronous 8K x 8 radiation hardened static RAM.
This RAM is fabricated using the Intersil 1.
2 micron silicon-on-sapphire CMOS technology.
This technology gives exceptional hardness to all types of radiation, including neutron fluence, total ionizing dose, high intensity ionizing dose rates, and cosmic rays.
Low power operation is provided by a fully static design.
Low standby power can be achieved without pull-up resistors, due to the gated input buffer design.
Ordering Information PART NUMBER HS1-65647RH-Q HS1-65647RH-8 HS1-65647RH/Proto HS1-65647RH/Sample HS9-65647RH-Q HS9-65647RH-8 HS9-65647RH/Proto HS9-65647RH/Sample HS9A-65647RH-Q TEMPERATURE RANGE -55oC -55oC to to +125oC +125oC 28 Lead SBDIP 28 Lead SBDIP 28 Lead SBDIP 28 Lead SBDIP 28 Lead Ceramic Flatpack 28 Lead Ceramic Flatpack 28 Lead Ceramic Flatpack 28 Lead Ceramic Flatpack 36 Lead Ceramic Flatpack DB NA PACKAGE -55oC to +125oC +25oC -55oC -55oC to to +125oC +125oC -55oC to +125oC +25oC -55oC to +125oC CAUTION: These devices are s...



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