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HSM2692

Hitachi Semiconductor
Part Number HSM2692
Manufacturer Hitachi Semiconductor
Description Silicon Epitaxial Planar Diode
Published Mar 26, 2005
Detailed Description HSM2692 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-093A (Z) Rev. 1 Jun. 1993 Features • Low forward r...
Datasheet PDF File HSM2692 PDF File

HSM2692
HSM2692


Overview
HSM2692 Silicon Epitaxial Planar Diode for Tuner Band Switch ADE-208-093A (Z) Rev.
1 Jun.
1993 Features • Low forward resistance.
(rf = 0.
9 max) • Low capacitance.
(C = 1.
2pFmax) • MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information Type No.
HSM2692 Laser Mark B1 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1 NC 2 Anode 3 Cathode HSM2692 Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Power dissipation Junction temperature Storage temperature Operation temperature Symbol VR Pd Tj Tstg Topr Value 35 150 125 –45 to +125 –20 to +60 Unit V mW °C °C °C Electrical Characteristics (Ta = 25°C) Item Reverse voltage Reverse current Forward voltage Capacitance Forward resistance Symbol VR IR VF C rf Min 35 — — — — Typ — — — — — Max — 50 1.
0 1.
2 0.
9 Unit V nA V pF Ω Test Condition I R = 10µA VR = 25V I F = 10mA VR = 6V, f = 1MHz I F = 2mA, f = 100MHz 2.
0 f = 100MHz Forward resistance r f (Ω ) 1.
5 1.
0 0.
5 0 10–4 10–3 Forward current I F (A) 10–2 Fig.
1 Forward resistance Vs.
Forward current 2 HSM2692 10 f = 1MHz Capacitance C (pF) 1.
0 10 –1 1.
0 10 Reverse voltage VR (V) 40 Fig.
2 Capacitance Vs.
Reverse voltage IF = 2mA Forward resistance r f (Ω ) 10 1.
0 10 –1 1.
0 10 Frequency f (MHz) 102 Fig.
3 Forward resistance Vs.
Frequency 3 HSM2692 Package Dimensions Unit: mm 0.
65 – 0.
3 + 0.
1 Laser Mark 0.
4 – 0.
05 + 0.
10 0.
16 – 0.
06 + 0.
10 3 + 0.
2 – 0.
6 0.
1 0.
65 + – 0.
3 2 0.
95 1 0.
95 2.
8 B 1 1.
9 0.
3 2.
8 + – 0.
1 1.
5 0 – 0.
10 1 NC 2 Anode 3 Cathode 0.
3 1.
1 – 0.
1 + 0.
2 HITACHI Code JEDEC Code EIAJ Code Weight (g) MPAK(1) — SC-59A 0.
011 4 Cautions 1.
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