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HSM276ASR

Hitachi Semiconductor
Part Number HSM276ASR
Manufacturer Hitachi Semiconductor
Description Silicon Schottky Barrier Diode
Published Mar 26, 2005
Detailed Description HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb. 2000 Features • High forward curr...
Datasheet PDF File HSM276ASR PDF File

HSM276ASR
HSM276ASR

Overview
HSM276ASR Silicon Schottky Barrier Diode for Balanced Mixer ADE-208-840(Z) Rev 0 Feb.
2000 Features • High forward current, Low capacitance.
• HSM276ASR which is interconnected in series configuration is designed for balanced mixer use.
• MPAK package is suitable for high density surface mounting and high speed assembly.
Ordering Information Type No.
HSM276ASR Laser Mark S20 Package Code MPAK Outline 3 2 1 (Top View) 1 Anode 1 2 Cathode 2 3 Cathode 1 Anode 2 HSM276ASR Absolute Maximum Ratings (Ta = 25°C) Item Repetitive peak reverse voltage Reverse voltage Average rectified current Junction temperature Storage temperature Note: Per one device Symbol VRRM VR IO * Value 5 3 30 125 -55 to +125 Unit V V mA °C °C Tj Tstg Electrical Characteristics (Ta = 25°C) *2 Item Reverse voltage Reverse current Forward current Capacitance Capacitance deviation ESD-Capability *1 Symbol Min VR IR IF C ∆C — 3.
0 — 35 — — 30 Typ — — — — — — Max — 50 — 0.
90 0.
10 — Unit V µA mA pF pF V Test Co...


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